Low on-resistance; rugged design
August 2013, San Jose, CA ---- Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck dc/dc converter power designs.
Packaged in a small 3mm square PMPAK®3x3, the AP6950GYT comprises a “high-side” control MOSFET (CH-1) and a “low-side” synchronous MOSFET (CH-2), providing a compact solution optimised for synchronous buck applications. Drain-Source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is low at 18mΩ (CH-1) and 10.5mΩ (CH-2)
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “Our MOSFETs provide the designer with cost-effective performance whilst retaining the best combination of fast switching, ruggedized device design, and low on resistance.”
Devices are RoHS-compliant and halogen-free; more data is available at
About Advanced Power Electronics Corp.
Established in Taiwan in 1998, Advanced Power Electronics Corporation has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments.
ISO-approved, Advanced Power Electronics Corp.’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue - trading profitably each year since its foundation - and it has been ranked as one of the world's top fifteen power MOSFET suppliers by iSuppli.
Advanced Power Electronics Corp. (USA),
Tel: +1 408-717-4231
Tel.: +44 1491-636393