Toshiba Expands Family of SiC Schottky Barrier Diodes

TOKYO — (BUSINESS WIRE) — September 19, 2013Toshiba Corporation (TOKYO:6502) today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products. Mass production shipments will start from today.

Toshiba SiC Schottky Barrier Diode (Photo: Business Wire)

Toshiba SiC Schottky Barrier Diode (Photo: Business Wire)

SBDs are suited for diverse applications, including power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba data).

SiC power devices offer more stable operation than current silicon devices–even at high voltages and currents–as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.

 

New product

Part Number       Electric Specifications   Package
VRRM IF VF (V)   IRRM (μA)
(V) (A) typ. / max typ. / max
TRS10E65C   650   10   1.5 / 1.7   0.42 / 90   TO-220 (2pin)
 

Current line-up

Part Number       Electric Specifications   Package
V RRM I F V F (V)   I RRM (μA)
(V) (A) typ. / max typ. / max
TRS6E65C 650 6 1.5 / 1.7 0.3 / 90 TO-220 (2pin)
TRS8E65C 650 8 1.5 / 1.7 0.4 / 90
TRS12E65C   650   12   1.54 / 1.7   0.45 / 90  
 

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