Leti CEO Marie Semeria to Deliver Opening Day Keynote at IEDM, Institute to Present 13 Papers

 On Sunday, Dec. 4, Institute also Will Lead Short Course

On ‘Design/Technology Enablers for Computing Applications’ and

Host Workshop for Invited Guests on ‘Disrupting the Computing Paradigm’

GRENOBLE, France – Nov. 17, 2016 – Leti CEO Marie Semeria will help kick off IEDM 2016 with an opening-day keynote address on Monday, Dec. 5, titled “Symbiotic Low-Power, Smart and Secure Technologies in the Age of Hyperconnectivity”. The institute also will present 13 papers, including three invited ones at the Dec. 3-7 gathering in San Francisco.

Leti, a globally recognized pioneer in providing innovative micro- and nanotechnology solutions for startups, SMEs and industry giants, also will host a workshop for invited guests covering “Disrupting the Computing Paradigm with Leti” on Sunday, Dec. 4.

Semeria also will participate on a panel Tuesday, Dec. 6, on “How will the semiconductor industry change to enable 50 billion connected devices”. Marc Duranton will moderate a Dec. 6 panel on “Challenges and Opportunities for Neuromorphic and Machine Learning”. Panelists include Carlo Reita, manager of Leti’s strategic program on advanced CMOS.

Paper topics include:


  • “Symbiotic Low-Power, Smart and Secure Technologies in the Age of Hyperconnectivity”, Plenary Session, Dec. 5
  • “SOI Technology for Quantum Information Processing”, Focus Session 13.4, Dec. 6
  • “Perspectives for Multicore Architectures using Advanced Technologies”, Session 35.1, Dec. 7


  • “Understanding RRAM Endurance, Retention and Window Margin Trade-off using Experimental Results and Simulations”, Session 4.5, Dec. 5
  • “Experimental Demonstration of Short and Long Term Synaptic Plasticity Using OxRAM Multi k-bit Arrays for Reliable Detection in Highly Noisy Input Data”, Session 16.6, Dec. 6


  • “Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs”, Session 7.5, Dec. 5
  • “Vertically Stacked-NanoWires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain”, Session 17.6, Dec. 5

Light Sensing

  • “Extending the Functionality of FDSOI N- and P-FETs to Light Sensing”, Session 32.6, Dec. 7

Leti scientists also will offer a Short Course on “Design/Technology Enablers for Computing Applications” on Dec. 4:

  • Breaking the Memory Bottleneck in Computing Applications with Emerging Memory Technologies: A Design Perspective (Circuit Level)
  • Breaking the Memory Bottleneck in Computing Applications with Emerging Memory Technologies: A Technology Perspective (Device Level)

Leti’s workshop for invited guests at the Nikko Hotel will focus on “Disrupting the Computing Paradigm with Leti”. Dr. Karam Chatha of Qualcomm will provide the keynote.

Topics include:

  • Which Devices for New Computing Paradigms?
  • Revisiting the Memory Hierarchy for Tomorrow’s Computing Systems
  • 3D Technologies: Several Disruptive Technologies: a Look Ahead
  • Neuromorphic Approach for Advanced Pattern Recognition
  • Quantum Electronics for Efficient Computing

A full list of Leti presentations during IEDM can be found here http://www.leti.fr/en/Press/Press-releases

About Leti (France)

As one of three advanced-research institutes within the CEA Technological Research Division, Leti serves as a bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. It is committed to creating innovation and transferring it to industry. Backed by its portfolio of 2,800 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched 59 startups. Its 8,500m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. With a staff of more than 1,900, Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Follow us on www.leti.fr and @CEA_Leti.

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