EL SEGUNDO, Calif. – Dec. 18, 2017 National Instruments announcement
What: Product development cycles have become critical in the development of electronic devices, as they define cost, performance, and time to market. This new application note demonstrates the extraction procedure for the passive part of a SPICE model for the package and wire bonds of a bipolar junction transistor (BJT) up to 10 GHz. Elements of the package were modeled using NI AWR Design Environment, specifically Analyst™ 3D electromagnetic (EM) simulator and the quality and accuracy of the simulation was verified with measured results.
Where: The application note “Evaluation of Package Properties for RF BJTs” can be viewed at /resource-library/evaluation-package-properties-rf-bjts.