NI AWR Software Featured in GaN on SiC Power Amplifier Design Webinar


EL SEGUNDO, Calif. –  Apr. 25, 2018 AWR/NI announcement:

A webinar titled “A Gallium Nitride (GaN) on Silicon Carbide (SiC) 0.25 Microwave Process for PA, Low-Noise Amplifier (LNA) and Switch Design,” which features the use of the NI AWR Design Environment platform will be presented by Eric Leclerc of United Monolithic Semiconductors (UMS) on May 15, 2018. The webinar demonstrates the UMS GaN process design kit (PDK) within Microwave Office software that enables the design of drivers and high-power amplifiers up to 20 GHz for applications requiring high power-added efficiency (PAE) and for telecoms applications where linearity is a key factor for success.

Where: For details and to register for “A GaN on SiC 0.25 Microwave Process for PA, LNA and Switch Design,” visit

When: May 15, 2018 
          8 a.m. PT
          11 a.m. ET
          3 p.m. UTC



AWR, AWR Design Environment, Microwave Office, National Instruments, NI and are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.


Sherry Hess
Vice President of Marketing, AWR Group, NI
(310) 726-3000
Email Contact 


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