New Application Note Describes How to Design a GaN HEMT Doherty Amplifier for New-Generation Cellular Transmitters

EL SEGUNDO, Calif. – Dec. 19, 2018

Next-generation 4G/5G telecommunication systems require power amplifiers (PAs) to operate with high efficiency over a wide frequency range to provide multiband and multi-standard concurrent operation. This application note describes the use of NI AWR software, specifically Microwave Office circuit simulator, to design an innovative Doherty amplifier architecture with 200-W high-efficiency broadband 1.8-2.7 GHz gallium arsenide (GaN) high-electron mobility transistor (HEMT) technology. The PA achieved average efficiencies of 50-60 percent for output powers up to 100 W and significantly reduced the cost, size and power consumption of the transmitters.

Where: The Design of a High-Efficiency Broadband GaN HEMT Doherty Amplifier for New-Generation Cellular Transmitters application note is available at awrcorp.com/resource-library/design-high-efficiency-broadband-gan-hemt-doherty-amplifier-new-generation-cellular.

When: Immediately.

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AWR, AWR Design Environment, Microwave Office, National Instruments, NI and ni.com are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.

Contacts:

Sherry Hess
Vice President of Marketing, AWR Group, NI
(310) 726-3000
Email Contact 




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