Alpha and Omega Semiconductor Introduces a High SOA MOSFET for Hot Swap Applications

SUNNYVALE, Calif. — (BUSINESS WIRE) — March 20, 2019Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer and global supplier of a broad range of power semiconductors and power ICs, today introduced at the 2019 Applied Power Electronics Conference (APEC) in Anaheim, CA (held March 18th - 20th) the AONS32100. This new device delivers low Rdson with a high Safe Operating Area (SOA) capabilities ideally suited for demanding applications such as hot swap and effuse. A high SOA is essential in server hot swap applications where the MOSFET needs to be robust to manage the high in-rush current effectively.

This press release features multimedia. View the full release here:

AONS32100 (Graphic: Business Wire)

AONS32100 (Graphic: Business Wire)

AONS32100 delivers the best in class robustness for a 25V MOSFET in DFN 5x6. The new device has a maximum Rd(son) of 0.73mΩ at an applied Gate-Source Voltage equal to 10VGS. Under the SOA measurement condition of 12V and on for 25ms, the AONS32100 maximum current is 22A which is significantly higher than the previous generation.

“High reliability and availability are essential metrics in the server infrastructure. The Hot Swap MOSFET is one of the critical components that must be robust and reliable to meet customer demands. AONS32100 has strong SOA with low on-resistance to meet these requirements for hot swap applications,” said Peter H. Wilson, Marketing Director of MOSFET product line at AOS.

Technical Highlights






V IN (V)

V GS (±V)


R DS(ON) (mΩ max)
at V GS =


V GS (±V)
(max V)







                    10V     4.5V                            


    DFN5x6     30     20         0.73     1.08         1.6     15200     2000     1400     115     35

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