Efficient Power Conversion (EPC) Redefines Power Conversion with the Release of ePower™ Stage IC Family of Products

Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D audio

EL SEGUNDO, Calif. — (BUSINESS WIRE) — March 17, 2020EPC announces the introduction of an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility. The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures only 3.9 mm x 2.6 mm x 0.63 mm.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200317005112/en/

The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC’s proprietary GaN IC technology. (Graphic: Business Wire)

The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC’s proprietary GaN IC technology. (Graphic: Business Wire)

When operated in a 48 V to 12 V buck converter at 1 MHz switching frequency, the EPC2152 ePower Stage achieves a peak efficiency above 96% with a solution that is 33% smaller in size on the printed circuit board (PCB) compared to an equivalent multi-chip discrete implementation.

The EPC2152 is the first offering in what will be a wide-range family of integrated power stages available in chip scale package (CSP) as well as multi-chip quad flat modules (QFM). Within a year the family will fill out with products capable of operating at high frequency up to 3 to 5 MHz range as well as high current from 15 A to 30 A per power stage.

This family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Discrete power transistors are entering their final chapter. Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced engineering required,” said Alex Lidow, CEO and co-founder of EPC. “This new family of integrated power stages is the next significant stage in the evolution of GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.”

Development Board

The EPC90120 development board is a 80 V maximum device voltage, 12.5 A maximum output current, half bridge featuring the EPC2152 Integrated ePower™ Stage. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2152 Integrated ePower Stage.

Price and Availability

The EPC2152 ePower Stage is priced at $5.03 each in 1Ku volumes.

The EPC90120 development board is price at $123.75 each.

The EPC2152 and EPC90120 are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices and integrated circuits that provide even greater space, energy, and cost efficiency. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. .

Visit our web site: www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Efficient Power Conversion
Renee Yawger
tel: 908.475.5702
email: renee.yawger@epc-co.com




Review Article Be the first to review this article
Aldec

 Advanced Asembly

Featured Video
Latest Blog Posts
Bob Smith, Executive DirectorBridging the Frontier
by Bob Smith, Executive Director
You’re Invited! SEMI’s Innovation for a Transforming World
intelThe Dominion of Design
by intel
The Long Game: Product and Security Assurance
Anupam BakshiAgnisys Automation Review
by Anupam Bakshi
Setting a High Standard for Standards-Based IP
Jobs
Test and Measurement System Architect for Xilinx at San Jose, California
Senior Staff Field Application Engineer for Global Foundaries at Santa Clara, California
SerDes Applications Design Engineer for Xilinx at San Jose, California
Sr Engineer - RF/mmWave IC Design for Global Foundaries at Santa Clara, California
Senior HID Sensor Algorithm Architect for Apple Inc at Cupertino, California
Simulator UI Engineer - job post for Xilinx at San Jose, California
Upcoming Events
Join Chipx2021 - at Tel Aviv Expo convention center Tel Aviv Israel - Jun 21 - 22, 2021
Innovation for a Transforming World -virtual Event at United States - Jul 13 - 14, 2021
DesignCon 2021 at San Jose McEnery Convention Center San Jose, CA San Jose CA - Aug 16 - 18, 2021
SEMICON Southeast Asia 2021 Hybrid Event at Setia SPICE Convention Centre Penang Malaysia - Aug 23 - 27, 2021



© 2021 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise