EPC Releases Physics-Based Models That Project eGaN® Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif. — (BUSINESS WIRE) — January 21, 2021EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than 11 years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

This report presents the results of testing eGaN devices to the point of failure, which provides the information to identify intrinsic failure mechanisms of the devices. By identifying these intrinsic failure mechanisms, deep knowledge of the behavior of a device over time, temperature, electrical or mechanical stress can be developed and used to create physics-based models that accurately project the safe operating life of a product over a more general set of operating conditions.

This report is divided into nine sections, each dealing with a different failure mechanism:

Section 1: Intrinsic failure mechanisms impacting the gate electrode of eGaN devices

Section 2: Intrinsic mechanisms underlying dynamic RDS(on)

Section 3: Safe operating area (SOA)

Section 4: Testing devices to destruction under short-circuit conditions

Section 5: Custom test to assess reliability over long-term lidar pulse stress conditions

Section 6: Mechanical force stress testing

Section 7: Device solderability

Section 8: Thermo-mechanical stress

Section 9: Field reliability

According to Dr. Alex Lidow, CEO and co-founder of EPC, “The release of EPC’s 12th reliability report represents the cumulative experience of millions of devices and five generations of technology. These reliability tests have been undertaken to continue our understanding of the behavior of GaN devices over a wide range of stress conditions.”

Dr. Lidow continues, “Standard power semiconductor qualification testing is inadequate since it only reports parts that pass a very specific test condition. By employing our test-to-fail methodology we have consistently produced more robust, higher performance, and lower cost products for power conversion applications, and have amassed a reliability track record beyond what is achievable with traditional silicon MOSFET technology.”

EPC will host a series of webinars highlighting the advances in modeling, predicting, and measuring reliability in GaN devices that contribute to the major findings of the Phase-12 Reliability Report. Visit the EPC website to register.

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices and integrated circuits that provide even greater space, energy, and cost efficiency. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Visit our web site: epc-co.com

Follow us on Social Media: LinkedIn, YouTube, Facebook, Twitter, Instagram, YouKu

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Renee Yawger tel: 908.475.5702 email: renee.yawger@epc-co.com




Review Article Be the first to review this article

Featured Video
Editorial
Roberto FrazzoliEDACafe Editorial
by Roberto Frazzoli
Special Report: Machine Learning in EDA
More Editorial  
Latest Blog Posts
Bob Smith, Executive DirectorBridging the Frontier
by Bob Smith, Executive Director
Remembering Jim Hogan
Colin WallsEmbedded Software
by Colin Walls
Variable declarations in C – plenty of pitfalls
Anupam BakshiAgnisys Automation Review
by Anupam Bakshi
AUGER: Celebrating Our Users
Jobs
Senior HID Sensor Algorithm Architect for Apple Inc at Cupertino, California
SerDes Applications Design Engineer for Xilinx at San Jose, California
Circuit Design & Layout Simulation Engineer - Co-Op (Spring 2021) for Global Foundaries at Santa Clara, California
ASIC Engineer for Amazon at seattle, Washington
Pre-silicon Design Verification Engineer for Intel at Santa Clara, California
Technical Product Manager- SISW-EDA 238452 for Siemens AG at Fremont, California
Upcoming Events
IPC APEX EXPO 2021 Goes Virtual at - Mar 8 - 12, 2021
ADAS Sensors 2021 at The Henry Hotel 300 Town Center Drive Dearborn MI - Apr 7 - 8, 2021
ISQED'21 - 22nd International Symposium at POB 607 Los Altos CA - Apr 7 - 9, 2021
SEMI MEMS & Sensors Industry Group (MSIG), MSTC 2021 at United States - Apr 13 - 15, 2021
Verific: SystemVerilog & VHDL Parsers



© 2021 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise