Toshiba Launches Silicon Carbide MOSFET Module That Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

TOKYO — (BUSINESS WIRE) — February 24, 2021Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20210224006218/en/

Toshiba: MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module for industrial applications including railways vehicle and renewable energy power generation systems. (Graphic: Business Wire)

Toshiba: MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module for industrial applications including railways vehicle and renewable energy power generation systems. (Graphic: Business Wire)

To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility. The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Industrial motor control equipment

Features

  • Drain-source voltage rating : VDSS=3300V
  • Drain current rating : ID=800A Dual
  • High channel temperature range : Tch=175°C
  • Low loss :
    Eon=250mJ (typ.)
    Eoff=240mJ (typ.)
    VDS(on)sense=1.6V (typ.)
  • Low stray inductance : Ls=12nH (typ.)
  • High power density small iXPLV package

Main Specifications

(unless otherwise specified, @Tc=25°C)

Part number

MG800FXF2YMS3

Package

iXPLV

Absolute

maximum

ratings

Drain-source voltage VDSS (V)

3300

Gate-source voltage VGSS (V)

+25/-10

Drain current (DC) ID (A)

800

Drain current (pulsed) IDP (A)

1600

Channel temperature Tch (°C)

175

Isolation voltage Visol (Vrms)

6000

Electrical

characteristics

Drain-source voltage on-voltage (sense)

VDS(on)sense typ. (V)

@VGS= +20V,

ID=800A

1.6

Source-drain voltage on-voltage (sense)

VSD(on)sense typ. (V)

@VGS= +20V,

IS=800A

1.5

Source-drain voltage off-voltage (sense)

VSD(off)sense typ. (V)

@VGS= -6V,

IS=800A

2.3

Stray inductance module LSPN typ. (nH)

12

Turn-on switching loss

Eon typ. (mJ)

@VDD=1800V,

ID=800A,

Tch=150°C

250

Turn-off switching loss

Eoff typ. (mJ)

@VDD=1800V,

ID=800A,

Tch=150°C

240

Follow the link below for more on the new product.
MG800FXF2YMS3
https://toshiba.semicon-storage.com/info/lookup.jsp?pid=MG800FXF2YMS3

Follow the link below for more on Toshiba’s SiC power device lineup.
SiC Power Devices
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/sic-power-devices.html

Customer Inquiries
Small Signal Device Sales & Marketing Dept.
Tel: +81-3-3457-3411
https://toshiba.semicon-storage.com/ap-en/contact.html

*Company names, product names, and service names may be trademarks of their respective companies.
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, the company has taken its place among the leading general devices companies, and offers its customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

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