MoSys Introduces the First in a Family of Gigabit Ethernet Intellectual Property for ICs

Proven Technology Enables Fast Macro Integration of GigE PHY Technology into a Range of Consumer and Networking ICs

SUNNYVALE, Calif., Nov. 1 /PRNewswire-FirstCall/ -- MoSys, Inc. (NASDAQ: MOSY), a leading provider of high-density embedded memory and mixed- signal intellectual property (IP) solutions, today announced availability of a Gigabit Ethernet Physical Layer (PHY) on copper semiconductor IP. The product is the first of the company's GigaCell(TM) family of IP targeted at the Wide, Local, and Storage Area Networking markets. Proven in silicon form, the IP is available as a GigE PHY macro suitable for integration in numerous port configurations.


"The announcement of our high-performance Gigabit PHY is our first strategic move into the mixed-signal IP market," stated Max Bathaee, Director of Mixed-Signal Marketing at MoSys. "In the past, availability of high performance network products was limited to a few vendors due to the complexity of mixed-signal designs. This IP will enable our customers to develop advanced, highly-integrated networking SoCs for a broad range of applications including wireless networks, Voice-over-Internet Protocol (VoIP), Network Switches, Backbone, Power-over-Ethernet (PoE), and LAN on Motherboard (LoM) solutions."

The MoSys Gigabit PHY IP supports IEEE-defined 10/100/1000 BASE-T Ethernet over Category 5 (CAT 5) twisted pair cables and 10/100 BASE-T Ethernet over CAT 3, 4, and 5 cables. The Gigabit PHY is currently designed in a low power 130nm CMOS and can be readily ported to 65nm and 45nm processes. MoSys offers a multi-port Gigabit PHY with up to 8 integrated ports ready to be integrated with a System-on-Chip (SoC).

The Gigabit Ethernet PHY IP is available now to pure play foundries, IDMs and fabless semiconductor companies.


MoSys Inc. provides advanced memory and analog/mixed-signal IP for systems on chips (SoC), enabling electronic products to achieve levels of integration that would be impossible or impractical using conventional technology. The company's groundbreaking memory solutions include its patented 1T-SRAM(R) and 1T-FLASH(TM) technologies-high-density alternatives to traditional volatile and non-volatile embedded memory. MoSys analog/mixed-signal products feature a number of industry firsts, including the first DVD front end IP to support both Blu-ray (BD) and HD DVD formats. Using MoSys IP, system vendors can achieve best-in-class price/performance in markets such as home entertainment and graphics applications; mobile consumer devices; and networking and storage equipment. To date, MoSys technology has been shipped in over 135 million devices.

MoSys was founded in 1991, and had its initial public offering in 2001 (NASDAQ: MOSY). The company is headquartered in Sunnyvale, California at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

    1T-SRAM(R) , 1T-FLASH(TM), and GigaCell(TM) are registered trademarks of
MoSys, Inc.

    Sally Pedreiro                     Beverly Twing, Acct.
    MoSys, Inc.                         Manager
    Sunnyvale, CA                      Shelton IR
    +1 (408) 731-1832                  +1 (972) 239-5119 x126
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