Toshiba Launches Highest Density(1) Embedded NAND Flash Memory Devices
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Toshiba Launches Highest Density(1) Embedded NAND Flash Memory Devices

32nm e-MMC v4.4 Compliant Embedded Memories Combine Up To 64GB NAND and Controller in a Single Package

IRVINE, Calif., and TOKYO, Dec. 14 /PRNewswire/ -- Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC)*, its subsidiary in the Americas, today announced the launch of a 64 gigabyte(2) (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC(TM)(3) standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. (Please visit for a photo of the seventeen layer stack.)

Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC(TM) standard and its new features, including defining multiple storage areas and enhanced security features.

Demand continues to grow for embedded memories with a controller function that minimizes development requirements and eases integration into system designs. Toshiba has established itself as an innovator in this key area. The company was first to announce a 32GB e-MMC(TM) compliant device, and is now reinforcing its leadership by being first to market with a 64GB generation module.

"The e-MMC(TM) interface has become the most widely embraced embedded NAND solution with a built-in controller to simplify integration into system designs. With the addition of higher density, Ver 4.4 e-MMC(TM) compliant product offered as single package solutions or as part of a multi-chip module combined with DRAM, Toshiba can help designers reduce memory subsystem space requirements," said Scott Beekman, business development manager, mobile communications memory for TAEC.

Toshiba e-MMC(TM) Ver 4.4 devices are available in a standard configuration with the NAND flash and built-in controller or in a multi-chip module (MCP) with DRAM or other memory to reduce the memory subsystem requirement to one chip. Toshiba MCPs offer multiple memory technologies such as NAND Flash, NOR Flash, Pseudo SRAM (PSRAM), and low-power SDRAM in a single package to simplify layout and save valuable board space in increasingly complex, feature-rich cellular phones.

New Product Line-up

                                          Sample      Mass       Production
    Product Number   Cap.   Package      Shipment   Production      Scale

    THGBM2G9DGFBAI2 64GB  169Ball FBGA   Dec. 2009  1Q, 2010
                          14x18x1.4mm               (Jan.-Mar.)
                                                                 3 million/
    THGBM2G8D8FBAIB 32GB  169Ball FBGA   Feb. 2010  2Q, 2010        month
                          12x16x1.4mm               (Apr.-Jun.)    (Total)

    THGBM2G7D4FBAI9 16GB  169Ball FBGA   Jan. 2010  1Q, 2010
                          12x16x1.2mm               (Jan.-Mar.)

    THGBM2G6D2FBAI9  8GB  169Ball FBGA   Mar. 2010  2Q, 2010
                          12x16x1.2mm               (Apr.-Jun.)

    THGBM2G5D1FBAI9  4GB  169Ball FBGA   Apr. 2010  2Q, 2010
                          12x16x1.2mm               (Apr.-Jun.)

    THGBM2G4D1FBAI8  2GB  153Ball FBGA   2Q, 2010   3Q, 2010
                          11.5x13x1.2mm (Apr.-Jun.) (Jul.-Sep.)

Key Features

    1. The JEDEC/MMCA V4.4 compliant interface handles essential functions,
       including writing block management, error correction and driver software.
       It simplifies system development, allowing manufacturers to minimize
       development costs and speed up time to market for new and upgraded
    2. A wide product line-up supports capacities from 2 to 64GB. The
       high-capacity 64GB embedded devices can record up to 1,070 hours of music
       at a1 28Kbps bit rate, 8.3 hours of full spec high definition video(4)
       and 19.2 hours of standard definition video.
    3. The 64GB device stacks sixteen 32Gbit chips fabricated with leading-edge
       32nm process technology. Application of advanced chip thinning, layering
       and wire bonding technologies allowed Toshiba to achieve individual chips
       only 30 micrometers thick, and to layer and bond them in a small package.
       The result is the highest density embedded NAND flash memory module in
       the industry.
    4. The new chips support the advanced partitioning and security of e-MMC(TM)
       V4.4. Multiple storage areas can be configured, including several
       enhanced memory areas for system files or code, and a multi-level cell
       (MLC) area for data storage. The new 64GB product is sealed in a small
       FBGA package, which is 14mm x 18mm x 1.4mm and has a signal layout
       compliant with JEDEC/MMCA V4.4.



    Interface          JEDEC/MMCA V4.4 standard HS-MMC interface

    Power Supply       2.7V to 3.6V(memory core);
    Voltage            1.65V to 1.95V / 2.7V to 3.6V (interface)

    Bus width          x1, x4, x8

    Write Speed(5)     Target 20MB per sec. (Sequential/Interleave Mode)
                       Target 9MB per sec. (Sequential/No Interleave Mode)*

    Read Speed(5)      Target 37MB per sec. (Sequential Mode/Interleave
                       Target 22MB per sec. (Sequential/No Interleave Mode)*

    Temperature range  -25degrees to +85degees Celsius

    Package            153Ball FBGA (+16 support balls)

    *Available only for THGBM2G5D1FBAI9 and THGBM2G4D1FBAI8.

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor

manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2008 WW Semiconductor Revenue, April 2009). For additional company and product information, please visit For information on Toshiba memory products, please visit

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at, or from your TAEC representative.

MEMY 09 585

(1) For embedded NAND flash memory modules. Source: Toshiba, December 2009

(2) When used herein in relation to memory density, gigabyte and/or GB means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may be less. For details, please refer to specifications.

(3) e-MMC is a trademark and a product category for a class of embedded memory products built to the joint JEDEC/MultiMediaCard Association (MMCA) MMC Standard specification

(4) HD and SD are calculated at average bit rates of 17Mbps and 7Mbps, respectively.

(5) For purposes of measuring read and write speed in this context, 1 Megabyte or MB = 1,000,000 bytes. Read and write speed may vary depending on the controller, read and write conditions, such as file sizes you read and/or write.

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