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maxish
(Stranger )
10/03/06 12:07 PM
MOSFET modeling (berkeley SPICE vs P/HSpice) Report this article as Inappropriate to us !!!Login to Reply

Hello,

I have a model for a Motorola MOSFET - mtp6n60/mc. I get an error about several mosfet parameters (LAMBDA one of them) when trying to simulate it in Multisim- an XPICE/SPICE3F5 based simulator. The model is specified as a "Level 3" mosfet and according to Berkeley SPICE3F5 specs, the error inducing parameters are not supported in level 3, so the error makes sense. In fact, no SPICE model level supports the set of parameters in my model if used together. My guess is that this model is created specificaly for PSPICE or HSPICE who deviate from SPICE3F5 slightly.

Does anyone have a suggestion on how to best simulate this model in basic Berkely SPICE3F5? I tried commenting out these several parameters but that rendered the model almost useless.

Thanks,

Max

SPICE model:

.subckt mtp6n60/mc 10 20 30


* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 RDRAIN 0.8036
RDRAIN2 4 5 RDRAIN 0.0084
RSOURCE 31 6 RSOURCE 0.02018
RDBODY 8 30 RDBODY 0.0135
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 2.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 1.31e-09
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES (
+TC1 = 0.008891
+TC2 = 3.056e-05)
*
.MODEL RSOURCE RES (
+TC1 = -0.003198
+TC2 = 2.60004e-05)
*
.MODEL RDBODY RES (
+TC1 = 0.003945
+TC2 = 9.54752e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 13
+GAMMA = 2.6
+PHI = 0.6
+LAMBDA = 0.0019
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.59e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+UCRIT = 1000
+UEXP = 0
+UTRA = 0
+VMAX = 0
+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 0
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 1.129e-09
+VJ = 1.943
+M = 1.476
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.532e-11
+RS = 0
+N = 1.062
+TT = 2.5e-07
+CJO = 9.725e-10
+VJ = 1.127
+M = 0.6627
+EG = 1.11
+XTI = 5
+KF = 0
+AF = 1
+FC = 0.5
+BV = 671
+IBV = 0.00025)
.ENDS





Edited by maxish on 10/03/06 03:08 PM.



maxish
(Stranger )
10/31/06 01:48 PM
buggy new [re: maxish]Report this article as Inappropriate to us !!!Login to Reply

[ sorry .. found the bug, please reply again ]

Edited by ibsystems on 11/02/06 07:02 PM.



maxish
(Stranger )
11/06/06 02:04 PM
MOSFET not simulator problem new [re: maxish]Report this article as Inappropriate to us !!!Login to Reply

After further investigation, I have found that my problem is not with the MOSFET but rather with my circuit.

Those non-conforming MOSFET parameters can simply be commented out without degradation to the MOSFET model




BillShiphr
(Stranger )
08/20/20 05:14 AM
Re: MOSFET modeling (berkeley SPICE vs P/HSpice) new [re: maxish]Report this article as Inappropriate to us !!!Login to Reply

¿Su pene no ha estado en pie durante aproximadamente dos años y su urólogo no puede ayudarlo en nada? A continuación, vaya a este sitio comprar levitra que definitivamente le ayudará a levantar su polla y lo más importante con un mínimo de efectos secundarios. Así que no pospongas para más tarde





Pederson
(Stranger )
08/23/20 03:06 AM
Re: MOSFET modeling (berkeley SPICE vs P/HSpice) new [re: BillShiphr]Report this article as Inappropriate to us !!!Login to Reply

Motorola MOSFET has been described and explained on this blog page. This is a discussion forum. You must follow theseĀ best research paper writers to learn more things related to education. The Default web is also displayed on this blog page. Such things when discussed om such forums get more renowned. Thanks for sharing this.






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